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Study of Trapping and Recombination In a-Si:H By Means of Infrared Enhancement Spectra of Photoconductivity

Published online by Cambridge University Press:  28 February 2011

Wu Wenhao ,
Qiu Changhua ,
Zhao Shifu  and
Han Daxing
Wu Wenhao
Affiliation:
Institute of Physics, Academia Sinica, P.O. Box 603, Beijing, China
Qiu Changhua
Affiliation:
Institute of Physics, Academia Sinica, P.O. Box 603, Beijing, China
Zhao Shifu
Affiliation:
Institute of Physics, Academia Sinica, P.O. Box 603, Beijing, China
Han Daxing
Affiliation:
Institute of Physics, Academia Sinica, P.O. Box 603, Beijing, China
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Abstract

IR re-excitation of non-equilibrium carriers in undoped a-Si:H has been used to probe the profile of the distribution of deep traps. In a dualbeam experiment, after turning off a pump light, the trapped carriers are re-excited by an IR probe light which causes the photoconductivity(PC) to pass through a maximum, σmax, before settling down towards its steady state value, σs. σmax depends on the time interval td between turning off the pump light and turning on the probe light in a manner Δσ=σmax-σs∞td-α(T) Based on the multiple trapping (MT) model, the distribution of deep traps has been deduced from the temperature dependences of α(T).

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References

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