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Study of the Homogeneity of Fe-Doped Semiinsulating InP Wafers

Published online by Cambridge University Press:  10 February 2011

J. Jimenez ,
R. Fornar ,
M. Curti ,
E. de la Puente ,
M. Avella ,
L. F. Sanz ,
M. A. Gonzalez  and
A. Alvarez
J. Jimenez
Affiliation:
Física de la Materia Condensada, ETS Ingenieros Industriales, 47011 Valladolid, Spain
R. Fornar
Affiliation:
MASPEC CNR Institute, via Chiavari 18A, 43100 Parma, Italy.
M. Curti
Affiliation:
MASPEC CNR Institute, via Chiavari 18A, 43100 Parma, Italy.
E. de la Puente
Affiliation:
Física de la Materia Condensada, ETS Ingenieros Industriales, 47011 Valladolid, Spain
M. Avella
Affiliation:
Física de la Materia Condensada, ETS Ingenieros Industriales, 47011 Valladolid, Spain
L. F. Sanz
Affiliation:
Física de la Materia Condensada, ETS Ingenieros Industriales, 47011 Valladolid, Spain
M. A. Gonzalez
Affiliation:
Física de la Materia Condensada, ETS Ingenieros Industriales, 47011 Valladolid, Spain
A. Alvarez
Affiliation:
Física de la Materia Condensada, ETS Ingenieros Industriales, 47011 Valladolid, Spain
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Abstract

The homogeneity of semiinsulating Fe-doped InP wafers is studied using mapping techniques, Scanning Photocurrent (SPC) and Scanning Photoluminescence (SPL). These techniques allow to map with a micrometric spatial resolution the distribution of electrically active levels, in particular substitutional iron levels, Fe2+ and Fe3+. The correlation between both measurements allows to obtain information about the local compensation in terms of the [Fe3++Fe2+]/[Fe2+] ratio. Samples thermally treated were studied in order to analyse the consequences of the annealing on the homogeneity.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 484: Symposium F – Infrared Applications of Semiconductors II , 1997 , 625
Copyright
Copyright © Materials Research Society 1998

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