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A Study of the Crystallization of Amorphous Indium (Tin) Oxide

Published online by Cambridge University Press:  10 February 2011

David C. Paine ,
Eric Chason ,
Eric Chen ,
Dan Sparacin  and
Hyo-Young Yeorn
David C. Paine
Affiliation:
Brown University Division of Engineering, Box D Providence, RI 02912
Eric Chason
Affiliation:
Brown University Division of Engineering, Box D Providence, RI 02912
Eric Chen
Affiliation:
Brown University Division of Engineering, Box D Providence, RI 02912
Dan Sparacin
Affiliation:
Brown University Division of Engineering, Box D Providence, RI 02912
Hyo-Young Yeorn
Affiliation:
Brown University Division of Engineering, Box D Providence, RI 02912
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Abstract

The crystallization of amorphous indium oxide thin films with zero to 9.8 wt% SnO2, was studied using a combination of in situ MOSS (multibeam optical stress senor) and in situ resistivity measurements. We report that amorphous indium oxide deposited using electron beam evaporation undergoes crystallization in a two part process of amorphous structure relaxation followed by crystallization. MOSS measurements show that the relaxation process corresponds to a densification of the amorphous structure while crystallization results in a molar volume increase.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 623: Symposium U – Materials Science of Novel Oxide-Based Electronics , 2000 , 245
Copyright
Copyright © Materials Research Society 2000

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