Hostname: page-component-745bb68f8f-s22k5 Total loading time: 0 Render date: 2025-02-05T06:04:19.744Z Has data issue: false hasContentIssue false
  • English
  • Français

Study of Molybdenum-Alusil Interdiffusion Kinetics and Contact Resistance for VLSI Applications

Published online by Cambridge University Press:  26 February 2011

R. N. Singh ,
D. M. Brown ,
M. J. Kim  and
G. A. Smith
R. N. Singh
Affiliation:
General Electric Research and Development, Schenectady, N.Y., 12301
D. M. Brown
Affiliation:
General Electric Research and Development, Schenectady, N.Y., 12301
M. J. Kim
Affiliation:
General Electric Research and Development, Schenectady, N.Y., 12301
G. A. Smith
Affiliation:
General Electric Research and Development, Schenectady, N.Y., 12301
Get access

Abstract

Interdiffusion barrier characteristics of molybdenum thin films with Alusil(Al-1% Si) is studied between 733 and 7 63 K via sheet and contact resistance measurements, Rutherford backseattering spectrometry, secondary ion mass spectroscopy, and x-ray diffraction analysis. The results indicate that thermal annealing of Mo/Alusil thin film couples leads to MoAl compound formation initially as a nonplanar front, but extensive annealing results in complete transformation of Alusil to MoAl12 and a significant increase in contact resistance. The interdiffusion kinetics is studied and implications of these observations to VLSI device characteristics is discussed. Based on these results a safe time-temperature processing regime is proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54: Symposium E – Thin Films–Interfaces and Phenomena , 1985 , 817
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] McCaldin, J.O. and Sankur, H., Appl. Phys. Lett. 22, 64, 1973.Google Scholar
[2] Finetti, M., Ostoja, P., Solmi, S., and Soncini, G., Solid-State Electron. 23, 255, 1980.Google Scholar
[3] Mori, M., IEEE Trans. Electron Devices ED–30, 81, 1983.Google Scholar
[4] Singh, R.N., Brown, D.M., Kim, M.J., and Smith, G.A., J. Appl. Phys. 58, 4598, 1985.Google Scholar