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Study of Electrical Properties of Dislocations in ZNS Using Electric Force Microscopy

Published online by Cambridge University Press:  15 February 2011

G. F. Bai ,
V. F. Petrenko  and
I. Baker
G. F. Bai
Affiliation:
Thayer School of Engineering, Dartmouth College, Hanover, NH 03755
V. F. Petrenko
Affiliation:
Thayer School of Engineering, Dartmouth College, Hanover, NH 03755
I. Baker
Affiliation:
Thayer School of Engineering, Dartmouth College, Hanover, NH 03755
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Abstract

A combination of electric force microscopy (EFM) and non-contact scanning force microscopy (SFM) was used to study micro-indentation-induced dislocation bands in sphaleritic ZnS single crystals. Large local distortions in electrical potential from the dislocation bands were observed in the EFM images. For the first time, the electric charges of resting partial Zn(g) and S(g) dislocations were determined quantitatively. The results compare well with theoretical models.

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References

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