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Study of Cobalt Salicide Fabrication on Sub-Quarter Micron Polysilicon Lines

Published online by Cambridge University Press:  10 February 2011

Wei-Ming Chen ,
Scott Pozder ,
Young Limb ,
A R Sitaram  and
Bob Fiordalice
Wei-Ming Chen
Affiliation:
Semiconductor Technologies Laboratory
Scott Pozder
Affiliation:
Semiconductor Technologies Laboratory
Young Limb
Affiliation:
Semiconductor Technologies Laboratory
A R Sitaram
Affiliation:
Dynamic Memory Product Division
Bob Fiordalice
Affiliation:
Advanced Product Research and Development Laboratory 3501 Ed Bluestein Blvd. Motorola, Austin TX 78712
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Abstract

Comparison of anneal temperatures, sheet resistance, gate to source/drain leakage current, and implant pre-amorphization are studied for a conventional 2-step cobalt salicide process and a TiN capped cobalt salicide. The TiN capped cobalt silicide process is found to be superior to the conventional cobalt salicide process in producing lower sheet resistance and tighter sheet resistance distribution. The use of a TiN cap also suppresses Si out diffusion, which can prevent shorting between the gate and source/drain areas when pre-amorphization of Si substrate is used to enhance silicidation. The metal residue on oxide and nitride substrates after metal anneal and metal etch are compared using total reflection x-ray fluorescence. It is found that both Ti and Co residue on silicon nitride is higher than on silicon oxide after metal anneal and metal strip.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 429: Symposium N – Rapid Thermal and Integrated Processing V , 1996 , 163
Copyright
Copyright © Materials Research Society 1996

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References

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