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Studies of the Effects of Ion-Implantation and Electron Beam Irradiation on CuInSe2 Single Crystals

Published online by Cambridge University Press:  26 February 2011

C. A. Mullan ,
C. J. Kiely ,
A. Rockett ,
M. Imanieh ,
M. V. Yakushev  and
R. D. Tomlinson
C. A. Mullan
Affiliation:
Department of Materials Science and Engineering, University of Liverpool, England.
C. J. Kiely
Affiliation:
Department of Materials Science and Engineering, University of Liverpool, England.
A. Rockett
Affiliation:
Department of Materials Science and Engineering, University of Liverpool, England.
M. Imanieh
Affiliation:
Department of Materials Science and Engineering, University of Liverpool, England.
M. V. Yakushev
Affiliation:
Department of Materials Science and Engineering, University of Liverpool, England.
R. D. Tomlinson
Affiliation:
Department of Materials Science and Engineering, University of Liverpool, England.
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Abstract

A series of CuInSe2 single crystals which were grown by the vertical Bridgman technique have been implanted with oxygen and xenon ions. These implants tend to cause a change from n to p-type conductivity and an enhancement of the photoconductivity. We present HREM and SIMS characterisation of the microstructural effects caused by high dose ion implants on CuInSe2. We also correlate our data with calculated ion implant profiles. In addition, we show that CuInSe2 thin foils can undergo significant degradation under the electron beam irradiation conditions which are commonly encountered in electron microscopes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 1097
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Mitchell, K., Proc. 9th E. C. Photovoltaic Solar Energy Conference, Freiburg, 292, (1989).Google Scholar
2. Neumann, H., Cryst. Res Technol., 18, 483, (1983).Google Scholar
3. Rinçon, C., Bellabarba, C., Gonzalez, J. and Sanchez-Perez, G., Solar Cells, 16, 335, (1986).CrossRefGoogle Scholar
4. Noufi, R., Matson, R. J., Powell, R. C. and Herrington, C., Solar Cells, 16, 479, (1886).Google Scholar
5. Tomlinson, R. D., Hill, A. E., Imanieh, M., Pilkington, R. D., Roodbarmohammadi, A., Slifkin, M. A. and Yakushev, M. V., 9th E. C. Photovoltaic Solar Energy Conference, Freiburg, 149, (1989).Google Scholar
6. Tomlinson, R. D., Hill, A. E., Imanieh, M., Pilkington, R. D., Roodbarmohammadi, A., Slifkin, M. A. and Yakushev, M. V., Joum. Electronic. Mats., 20, 659, (1991).Google Scholar
7. Tomlinson, R. D., PVSEC, Sydney, Australia, 467, (1989).Google Scholar
8. Mullan, C. A., Casey, S., Jones, C., Kiely, C. J., Imanieh, M. and Tomlinson, R. D., elsewhere in this volume, (1992)Google Scholar
9. Kazmerski, L. L., Burnham, N. A., Swartzlander, A. B., Nelson, A. J. and Asher, S. E., 19th Photovoltaics Specialists Conference, 1315, (1987).Google Scholar
10. Bierstack, J. P., Ion Beam Modification of Insulators, eds. Arnold, G. and Mazzoldi, P. (Elsevier, Amsterdam), p. 1, (1987).Google Scholar
11. Neumann, H., Perlt, B., Abdul-Hussein, N. A. K., Tomlinson, R. D. and Hill, A. E., Solid State Commun., 42, 855, (1982).Google Scholar
12. Kiely, C. J., Chyi, J-I., Rockett, A. and Morkoç, H., Phil. Mag. A, 60, 321, (1989).Google Scholar