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Structure of Sc2O3 Films Epitaxially Grown on α-Al2O3 (111)

Published online by Cambridge University Press:  17 March 2011

A. R. Kortan ,
M. Hong ,
J. Kwo ,
P. Chang ,
C. P. Chen ,
J. P. Mannaerts  and
S. H. Liou
A. R. Kortan
Affiliation:
Dept. Materials Science and Engineering, National Tsing Hua Univ., Hsin Chu, Taiwan
M. Hong
Affiliation:
Dept. Materials Science and Engineering, National Tsing Hua Univ., Hsin Chu, Taiwan
J. Kwo
Affiliation:
Department of Physics, National Tsing Hua University, Hsin Chu, Taiwan
P. Chang
Affiliation:
Dept. Materials Science and Engineering, National Tsing Hua Univ., Hsin Chu, Taiwan
C. P. Chen
Affiliation:
Dept. Materials Science and Engineering, National Tsing Hua Univ., Hsin Chu, Taiwan
J. P. Mannaerts
Affiliation:
Dept. Materials Science and Engineering, National Tsing Hua Univ., Hsin Chu, Taiwan
S. H. Liou
Affiliation:
Department of Physics, University of Nebraska, Lincoln, Nebraska, USA
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Abstract

We have characterized the structure of the epitaxial Sc2O3 films grown on a α-Al2O3 (111) substrate using molecular beam epitaxy (MBE) techniques. The Sc2O3 films grow in the bulk bixbyite phase with a very uniform thickness, and a high structural perfection. They grow with their cubic (111) axis parallel to the rhombohedral (111) axis of the sapphire substrate. The in-plane orientation of the films, however, is rotated by ±30 degrees with respect to the substrate rhombohedral axes. This is explained by the presence of two equivalent orientations of the 3-fold axis of the film on the quasi 6-fold surface of the substrate.

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References

REFERENCES

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