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Structure and Bonding in Nitrided Oxide Films by Sims and Xps

Published online by Cambridge University Press:  10 February 2011

S. W. Novak ,
J. R. Shallenberger ,
D. A. Cole  and
J.W. Marino
S. W. Novak
Affiliation:
Evans East, 104 Windsor Center, Suite 101, East Windsor, NJ 08520snovak@evanseast.com
J. R. Shallenberger
Affiliation:
Evans East, 104 Windsor Center, Suite 101, East Windsor, NJ 08520
D. A. Cole
Affiliation:
Evans East, 104 Windsor Center, Suite 101, East Windsor, NJ 08520
J.W. Marino
Affiliation:
Evans East, 104 Windsor Center, Suite 101, East Windsor, NJ 08520
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Abstract

The N distribution and bonding in five types of oxynitride films have been investigated using SIMS and XPS. Films were grown using N2O, NO-O2 and NH3 gas sources, a remote plasma N source and a Helicon plasma source. The SIMS measurements show different N distributions for each type of sample. XPS measurements show only N≡Si3 bonding in the gas source films, N≡Si3 and O-N-Si2 bonding in the remote plasma sample, and N≡Si3, O-N≡Si2, and O2≡N-Si bonding in the Helicon plasma sample. Angle-resolved XPS measurements show that the O2≡N-Si bonding is deepest in the sample whereas the O-N≡Si2 bonding is associated with a surface oxide.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 567: Symposium R – Ultrathin SiO2 and Higg-K Materials for ULSI Gate Dielectrics , 1999 , 579
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

1 Hill, J.M., Royce, D.G., Fadley, C.S., Wagner, L.F. and Grunthaner, F.J., Chem. Phys. Lett. 44 225 (1976).10.1016/0009-2614(76)80496-4Google Scholar
2 Bischoff, J.L., Lutz, F., Bolmont, D. and Kuber, L., Surf Sci. 251/252 170 (1991).10.1016/0039-6028(91)90975-XGoogle Scholar
3 Bhat, M., Yoon, G.W., Kin, J., Kwong, D.L., Arendt, M. and White, J.M., Appl. Phys. Lett. 64 1168 (1994).10.1063/1.111951Google Scholar
4 Green, M.L., Brasen, D., Evans-Lutterodt, K.W., Feldman, L.C., Krisch, K., Lennard, W., Tang, H.-T., Manchanda, L. and Tang, M.-T., Appl. Phys. Lett. 65 848 (1994).10.1063/1.112980Google Scholar
5 Hegde, R.I., Tobin, P.J., Reid, K.G., Maiti, B. and Ajuria, S.A., Appl. Phys. Lett. 66 2882 (1995)10.1063/1.113461Google Scholar
6 Lu, H.C., Gusev, E.P., Gustafsson, T. and Garfunkel, E., Green, M.L., Brasen, D. and Feldman, L.C., Appl. Phys. Lett. 69 2713 (1996).10.1063/1.117687Google Scholar
7 Hegde, R. I., Maiti, B., Rai, R.S., Reid, K.G. and Tobin, P.J., J. Electrochem. Soc. 145 L13–15 (1998).10.1149/1.1838200Google Scholar
8 Baumvol, I.J.R., Stedile, F.C., Ganem, J.-J., Trimaille, I. and Rigo, S., Appl. Phys Lett 70 2007 (1997).10.1063/1.118804Google Scholar
9 Kraft, R., Schneider, T.P., Dostalik, W.W. and Hattangady, S., J. Vac. Sci. Technol. B 15, 967 (1997).10.1116/1.589516Google Scholar
10 Frost, M.R. and Magee, C.W., Appl. Surf. Sci. 104/105 379 (1996).10.1016/S0169-4332(96)00175-4Google Scholar
11 Tang, H.T., Lennard, W.N., Zinke-Allmang, M., Mitchell, I.V., Feldman, L.C., Green, M.L. and Brasen, D., Appl. Phys. Lett. 64 3473 (1994).10.1063/1.111948Google Scholar
12 Tsong, I.S.T., Monkowski, J.R. and Hoffman, D.W., Nucl. Inst. Meth. 182/183 237 (1981).10.1016/0029-554X(81)90693-5Google Scholar
13 Kaluri, S.R. and Hess, D.W., Appl. Phys. Lett. 69 1053 (1996).10.1063/1.116928Google Scholar
14 Ting, W., Hwang, H., Lee, J. and Kwong, D.L., Appl. Phys. Lett. 57 2808 (1990).10.1063/1.104199Google Scholar
15 Shallenberger, J.R., Cole, D.A., and Novak, S.W., in press, Jour. Vac. Sci. Tech. (1999).Google Scholar