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Structural Properties of GaN films grown by Molecular Beam Epitaxy on vicinal SiC(0001)

Published online by Cambridge University Press:  21 March 2011

C. D. Lee ,
R. M. Feenstra ,
O. Shigiltchoff ,
R. P. Devatya  and
W. J. Choyke
C. D. Lee
Affiliation:
Department of Physics, Carnegie Mellon University, Pittsburgh, PA 15213
R. M. Feenstra
Affiliation:
Department of Physics, Carnegie Mellon University, Pittsburgh, PA 15213
O. Shigiltchoff
Affiliation:
Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260
R. P. Devatya
Affiliation:
Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260
W. J. Choyke
Affiliation:
Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260
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Abstract

Gallium nitride films are grown by plasma-assisted molecular beam epitaxy (MBE) on vicinal 6H-SiC(0001) substrates with [1 1 00] and [11 2 0] miscut directions. The hydrogen-etched substrates display straight, or chevron shaped steps respectively, and the same morphology is observed on the GaN films. X-ray rocking curves display substantially reduced width for films on the vicinal substrates compared to singular substrates, for the same Ga/N flux ratio used during growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I3.40.1
Copyright
Copyright © Materials Research Society 2002

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References

[1] Ramachandran, V., Smith, A. R., Feenstra, R. M., and Greve, D. W., J. Vac. Sci. Technol. A 17, 1289 (1999).Google Scholar
[2] Torres, V. M., Edwards, J. L., Wilkens, B. J., Smith, D. J., Doak, R. B., and Tsong, I. S. T., Appl. Phys. Lett. 74, 985 (1999).Google Scholar
[3] Xue, Q. Z., Xue, Q. K., Hasegawa, Y., Tsong, I. S. T., and Sakurai, T., Appl. Phys. Lett. 74, 2468 (1999).Google Scholar
[4] Lantier, R., Rizzi, A., Guggi, D., H. Lüth, Neubauer, B., Gerthsen, D., Frabboni, S., Colì, G., and Cingolani, R., MRS Internet J. Nitride Semicond. Res. 4S1, G3.50 (1999).Google Scholar
[5] Brandt, O., Muralidharan, R., Waltereit, P., Thamm, A., Trampert, A., Kiedrowski, H. von, and Ploog, K. H., Appl. Phys. Lett. 75, 4019 (1999).Google Scholar
[6] Xie, M. H., Zheng, L. X., Cheung, S. H., Ng, Y. F., Wu, H., Tong, S. Y., and Ohtani, N., Appl. Phys. Lett. 77, 1105 (2000).Google Scholar
7] Lee, C. D., Ramachandran, V., Sagar, A., Feenstra, R. M., Greve, D. W., Sarney, W. L. and Salamanca-Riba, L., Look, D. C., Bai, S., Choyke, W. J. and Devaty, R. P., J. Electron. Mat. 30, 162 (2001).Google Scholar
[8] Ramachandran, V., Brady, M. F., Smith, A. R., Feenstra, R. M., and Greve, D. W., J. Electron. Mater. 27, 308 (1998).Google Scholar
[9] Smith, A. R., Feenstra, R. M., Greve, D. W., Shin, M.-S., Skowronski, M., Neugebauer, J., and Northrup, J., Appl. Phys. Lett. 72, 2114 (1998).Google Scholar
[10] Lee, C. D., Sagar, A., Feenstra, R. M., Sarney, W. L., Salamanca-Riba, L., and Hsu, J. W. P., Phys. Stat. Sol. (b), to appear.Google Scholar
[11] Lee, C. D., Sagar, A., Feenstra, R. M., Inoki, C. K., Kuan, T. S., Sarney, W. L. and Salamanca-Riba, L., Appl. Phys. Lett. 79, 3248 (2001).Google Scholar