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Structural Investigations of (GaIn)(NAs)/GaAs Multi-Quantum-Wells by Transmission Electron Microscopy

Published online by Cambridge University Press:  10 February 2011

K. Volz ,
A. Hasse ,
A.K. Schaper ,
T.E. Weiric ,
F. Höhnsdorf ,
J. Koch  and
W. Stolz
K. Volz
Affiliation:
Materials Science Department, Darmstadt University of Technology, 64287 Darmstadt, Germany, Electronic mail: volz@mailer.uni-marburg.de
A. Hasse
Affiliation:
Materials Science Department, Darmstadt University of Technology, 64287 Darmstadt, Germany
A.K. Schaper
Affiliation:
Materials Science Department, Darmstadt University of Technology, 64287 Darmstadt, Germany
T.E. Weiric
Affiliation:
Materials Science Center, Philipps-University, 35032 Marburg, Germany
F. Höhnsdorf
Affiliation:
Materials Science Department, Darmstadt University of Technology, 64287 Darmstadt, Germany
J. Koch
Affiliation:
Materials Science Department, Darmstadt University of Technology, 64287 Darmstadt, Germany
W. Stolz
Affiliation:
Materials Science Department, Darmstadt University of Technology, 64287 Darmstadt, Germany
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Abstract

The structure of compressively strained (GaIn)(NAs)/GaAs multi-quantum wells (MQWs) grown by MOVPE is investigated using TEM. The quaternary, metastable material exhibits a high structural perfection if a N concentration of 4% is not exceeded. Phase separation or clustering effects are not observed, and the In is dispersed homogeneously throughout the quantum wells. The interface roughness of the quantum wells to the GaAs barriers is in the order of several monolayers. Increasing the N content to above 4.5% results in a deterioration of the structure and of the homogeneity of the wells

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References

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