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Structural Imperfections in Ulrathin Oxides Grown on Hydrogen Terminated Silicon Surfaces

Published online by Cambridge University Press:  21 February 2011

Takeo Hattori  and
Kazuaki Ohishi
Takeo Hattori
Affiliation:
Department of Electrical and Electronic Engineering, Musashi Institute of Technology 1-28-1 Tamazutsumi, Setagaya-ku, Tokyo 158, Japan
Kazuaki Ohishi
Affiliation:
Department of Electrical and Electronic Engineering, Musashi Institute of Technology 1-28-1 Tamazutsumi, Setagaya-ku, Tokyo 158, Japan
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Abstract

The initial stage of oxidation of 40wt-% NH4F treated Si(111) surface at 300 °C in dry oxygen with a pressure of 133 Pa and the subsequent oxidation at 600 and 800°C were studied. It was found from the analysis of Si 2p photoelectron spectra that non-uniform layer by layer oxidation proceeds at 300°C, while the layer by layer oxidation proceeds at 600 and 800°C. Furthermore, at these temperatures the interface becomes atomically flat with the progress of oxidation.

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References

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