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Structural Characterization of Ultrathin Epitaxial ErSi2−x on Si(111)

Published online by Cambridge University Press:  28 February 2011

F.H. Kaatz ,
J. Van der Spiegel  and
W.R. Graham
F.H. Kaatz
Affiliation:
Department of Materials Science and Engineering, Laboratory for Research on the Structure of Matter and the University of Pennsylvania, Philadelphia PA 19104-6202
J. Van der Spiegel
Affiliation:
Department of Electrical Engineering, Laboratory for Research on the Structure of Matter and the University of Pennsylvania, Philadelphia PA 19104-6202
W.R. Graham
Affiliation:
Department of Materials Science and Engineering, Laboratory for Research on the Structure of Matter and the University of Pennsylvania, Philadelphia PA 19104-6202
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Abstract

The epitaxial structure of ErSi2−x on Si(1 11) has been investigated using Rutherford backscattering (RBS) and transmission electron microscopy (TEM). Films 10 nm. thick show channeling minimum yields of 4% after room temperature deposition and annealing to 800°C. Plan view electron microscopy on ultrathin layers 0.5 nm. to 10 nm. thick reveals the formation of a complex microstructure involving vacancy ordering in these films. This superlattice structure is interpreted by considering domain formation and twinning in the heteroepitaxial ErSi2−x.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 198: Symposium V – Epitaxial Heterostructures , 1990 , 601
Copyright
Copyright © Materials Research Society 1990

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References

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