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Structural Characterization of Thick Gan Films Grown by Hydride Vapor Phase Epitaxy

Published online by Cambridge University Press:  15 February 2011

L. T. Romano ,
R. J. Molnar ,
B. S. Krusor ,
G. A. Anderson ,
D. P. Bour  and
P. Maki
L. T. Romano
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
R. J. Molnar
Affiliation:
Massachusetts Institute of Technology, Lincoln Laboratory, Lexington, MA 02173-9108
B. S. Krusor
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
G. A. Anderson
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
D. P. Bour
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
P. Maki
Affiliation:
Massachusetts Institute of Technology, Lincoln Laboratory, Lexington, MA 02173-9108
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Abstract

The structural quality of GaN films grown by hydride vapor phase epitaxy (HVPE) was characterized by transmission electron microscopy (TEM), x-ray diffraction (XRD), and atomic force microscopy (AFM). Films were grown up to 40μm on sapphire with either a GaC1 pretreatment prior to growth or on a ZnO buffer layer. Dislocation densities were found to decrease with increasing film thickness. This is attributed to the mixed nature of the defects present in the film which enabled dislocation annihilation. The thickest film had a defect density of 5×107 dislocations/cm2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 245
Copyright
Copyright © Materials Research Society 1996

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