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Structural Characterization of Short-Period SimGEn Superlattices by Transmission Electron Microscopy and X-Ray Diffraction

Published online by Cambridge University Press:  22 February 2011

W. Jäger ,
K. Leifer ,
P. Ehrhart ,
E. Kasper  and
H. Kibbel
W. Jäger
Affiliation:
Institute for Solid State Research, Research Center Julien D-5170 Julien Fed. Rep. Germany
K. Leifer
Affiliation:
Institute for Solid State Research, Research Center Julien D-5170 Julien Fed. Rep. Germany
P. Ehrhart
Affiliation:
Institute for Solid State Research, Research Center Julien D-5170 Julien Fed. Rep. Germany
E. Kasper
Affiliation:
Daimler-Benz Research Center D-7900 Ulm Fed. Rep. Germany
H. Kibbel
Affiliation:
Daimler-Benz Research Center D-7900 Ulm Fed. Rep. Germany
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Abstract

High resolution and analytical transmission electron microscopy (TEM) and X-ray diffraction (XRD) were used to characterize short-period strained-layer Sim-Gen superlattices ( m monolayers Si, n monolayers Ge, total number of periods N≤ 145, total thickness ≃ 200 nm). The superlattices were grown by low-temperature molecular beam epitaxy (T = 300–400°C) on different SiGe alloy buffer layers on Si (100)substrates. The combination of these two methods shows that detailed informations can be obtained about superlattice periodicity, interface roughness, strain, and average composition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991 , 167
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

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