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Structural Characterization of Porous Silicon Fabricated by Electrochemical and Chemical Dissolution of Si Wafers

Published online by Cambridge University Press:  15 February 2011

S. Miyazaki ,
T. Yasaka ,
K. Okamoto ,
K. Shiba ,
K. Sakamoto  and
M. Hirose
S. Miyazaki
Affiliation:
Department of Electrical Engineering, Hiroshima University Higashi-Hiroshima 724, Japan
T. Yasaka
Affiliation:
Department of Electrical Engineering, Hiroshima University Higashi-Hiroshima 724, Japan
K. Okamoto
Affiliation:
Department of Electrical Engineering, Hiroshima University Higashi-Hiroshima 724, Japan
K. Shiba
Affiliation:
Department of Electrical Engineering, Hiroshima University Higashi-Hiroshima 724, Japan
K. Sakamoto
Affiliation:
Department of Electrical Engineering, Hiroshima University Higashi-Hiroshima 724, Japan
M. Hirose
Affiliation:
Department of Electrical Engineering, Hiroshima University Higashi-Hiroshima 724, Japan
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Abstract

The structure of porous silicon exhibiting efficient visible photoluminescence has been characterized by using Fourier transformed infrared absorption, Raman scattering and x-ray diffraction. It is shown that the lattice spacing in the porous Si layer expands by about 0.3% in the direction perpendicular to the surface and also a partially disordered structure is existing. Electron beam irradiation causes desorption of hydrogen and fluorine bonds which terminate the surface, resulting in the quenching of the visible luminescence. The chemical etching of such layer has led to complete recovery of the luminescence intensity as well as the hydrogen and fluorine bonds termination.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 256: Symposia AA – Light Emission from Silicon , 1991 , 185
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

[1] Canham, L. T., Appl. Phys. Latt. 52,1046 (1990).Google Scholar
[2] Lehman, V. and Gosele, U., Appl. Phys. Latt., 58,856 (1991).Google Scholar
[3] Wolterd, D. J., Reimen, J. A. and Scott, B. A., Appl. Phys. Lett. 42, 369 (1983).Google Scholar
[4] Fuchs, H. D., Brandt, M. S., Weber, J. and Stutzmann, M., MRSTFall Meeting, Symp. AA (Boston, 1991)Google Scholar
[5] Chabal, Y. J., Higashi, G. S., Raghavachari, K. and Burrows, V. A., J. Vac. Sci. Technol. A, 7, 2104 (1989).Google Scholar
[6] Fang, C. J., Lay, L., Shanks, H. R., Gruntz, K. J. and Cardona, M.. Phys. Rev. B, 22, 6140 (1980).Google Scholar
[7] Lucovsky, G., Nemanich, R. J. and Knights, J. C.., Phys. Rev. B, 19, 2064 (1979).Google Scholar
[8] Kanellis, G., Morhange, J. F. and Balkanski, M., Phys. Rev. B, 21, 1543 (1980).Google Scholar