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Structural and Electronic Properties of Pb/Cu Multilayers

Published online by Cambridge University Press:  28 February 2011

D. Neerinck ,
K. Temst ,
H. Vanderstraeten ,
C. Van Haesendonck ,
Y. Bruynseraede ,
A. Gilabert  and
Ivan K. Schuller
D. Neerinck
Affiliation:
Laboratorium voor Vaste Stof-Fysika en Magnetisme, Katholieke Universiteit Leuven, B-3030 Leuven, Belgium
K. Temst
Affiliation:
Laboratorium voor Vaste Stof-Fysika en Magnetisme, Katholieke Universiteit Leuven, B-3030 Leuven, Belgium
H. Vanderstraeten
Affiliation:
Laboratorium voor Vaste Stof-Fysika en Magnetisme, Katholieke Universiteit Leuven, B-3030 Leuven, Belgium
C. Van Haesendonck
Affiliation:
Laboratorium voor Vaste Stof-Fysika en Magnetisme, Katholieke Universiteit Leuven, B-3030 Leuven, Belgium
Y. Bruynseraede
Affiliation:
Laboratorium voor Vaste Stof-Fysika en Magnetisme, Katholieke Universiteit Leuven, B-3030 Leuven, Belgium
A. Gilabert
Affiliation:
Laboratoire de Physique de la Matière Condensée, Université de Nice, Pare Valrose, F 06034 Nice Cedex, France
Ivan K. Schuller
Affiliation:
Physics Department-B019, University of California-San Diego, La Jolla, California 92093, U.S.A.
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Abstract

We have performed extensive structural and electronic transport measurements of Pb/Cu multilayered structures. The high-angle x-ray diffraction spectrum indicates the presence of continuous interfacial disorder. In the low-angle x-ray spectrum, pronounced minima occur at positions given by q = 2π/Λ, where Λ is the bilayer thickness. This is in sharp contrast to the results for Pb/Ge (crystalline/amorphous) multilayers, where minima are observed at positions q = 2π / tPb with tPb the Pb thickness. These low-angle x-ray spectra can be explained by taking into account lateral coherence and continuously distributed thickness fluctuations. The effect of this interfacial disorder on the electronic properties is investigated by measuring the low-temperature resistivity and the superconducting transition temperature of the multilayers. The calculated values for the elastic mean free path in the individual layers confirm the presence of strong interfacial scattering. The thickness dependence of the critical temperature is explained by taking into account an interfacial barrier with penetration probability σ ≃ 0.5.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 599
Copyright
Copyright © Materials Research Society 1990

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