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Structural and Electronic Properties of Negative Electron Affinity Epitaxial Diamond (110) Films Studied Using Atomic Resolution UHV STM

Published online by Cambridge University Press:  10 February 2011

S.C. Lim ,
R.E. Stallcup II ,
I. Akwani  and
J.M. Perez
S.C. Lim
Affiliation:
Physics Department, University of North Texas, Denton, TX 76203
R.E. Stallcup II
Affiliation:
Physics Department, University of North Texas, Denton, TX 76203
I. Akwani
Affiliation:
Physics Department, University of North Texas, Denton, TX 76203
J.M. Perez
Affiliation:
Physics Department, University of North Texas, Denton, TX 76203
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Abstract

We report ultrahigh vacuum (UHV) scanning tunneling microscopy (STM) studies of the structural and electronic properties of epitaxial diamond (110) films. We observe that epitaxial diamond (110) films grow very rough due to striations. The striations are found to be due to the appearance of(111) faces and contain (100) steps. UHV STM atomic resolution images of the diamond (110) films show a (lxi) zigzag structure that measures 1.5 ± 0.1 Å × 1.5 ± 0.1 Å, in agreement with theoretical predictions for the hydrogen terminated diamond (110) surface. Ultraviolet spectroscopy shows that the epitaxial films have a photoelectric threshold of 5.3 ± 0.1 eV, providing evidence that the films have a negative electron affinity surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 509: Symposium C – Materials Issues in Vacuum Microelectronics , 1998 , 165
Copyright
Copyright © Materials Research Society 1998

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References

1 Belton, D. and Harris, S.J., J. Chem. Phys. 96, 2371 (1992).Google Scholar
2 Nemanich, R.J., Baumann, P.K. and Weide, J. van der, in Applications of Diamond Films and Related Materials, edited by Feldman, A., Tzeng, Y., Yarbrough, W.A., Yoshikawa, M., and Murakawa, M. (NIST, Gaithersburg, MD, 1995), pp. 17–24.Google Scholar
3 Alfonso, D.R., Drabold, D.A. and Uolla, S.E., Phys. Rev. B 51, 14669 (1995).Google Scholar
4 Stallcup, R.E., Aviles, A.F. and Perez, J.M., Appl. Phys. Lett. 66, 2331 (1995).Google Scholar
5 Lim, S.C., Ph.D. Dissertation, University of North Texas, 1998.Google Scholar
6 Narayan, J., J. Mater. Res. 5, 2414 (1990).Google Scholar
7 Mercer, T.W., Russel, J.N. Jr., and Pehrsson, P.E., Surf. Sci. 392, L21 (1997).Google Scholar
8 Lurie, P.G. and Wilson, J.M., Surf. Sci. 65, 453 (1977).Google Scholar
9 See, for example, Dalven, R., Introduction to Applied Solid State Physics (Plenum Press, New York, 1980).Google Scholar
10 Twichell, J.C. and Geis, M.W., Solid State Research, Lincoln Laboratory, MIT, 1993:2, p. 16.Google Scholar
11 Kern, G. and Hafner, J., Phys. Rev. B 56, 4203 (1997).Google Scholar