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Structural and Electrical Properties of Beryllium Implanted Silicon Carbide

Published online by Cambridge University Press:  10 February 2011

T. Henkel ,
Y. Tanaka ,
N. Kobayashi ,
H. Tanoue ,
M. Gong ,
X. D. Chen ,
S. Fung  and
C. D. Beling
T. Henkel
Affiliation:
Electrotechnical Laboratory, Tsukuba, Ibaraki 305-8568, Japan, henkel@)etl.go.jp
Y. Tanaka
Affiliation:
Electrotechnical Laboratory, Tsukuba, Ibaraki 305-8568, Japan, henkel@)etl.go.jp
N. Kobayashi
Affiliation:
Electrotechnical Laboratory, Tsukuba, Ibaraki 305-8568, Japan, henkel@)etl.go.jp
H. Tanoue
Affiliation:
Electrotechnical Laboratory, Tsukuba, Ibaraki 305-8568, Japan, henkel@)etl.go.jp
M. Gong
Affiliation:
Physics Department, The University of Hong Kong, Hong Kong, China
X. D. Chen
Affiliation:
Physics Department, The University of Hong Kong, Hong Kong, China
S. Fung
Affiliation:
Physics Department, The University of Hong Kong, Hong Kong, China
C. D. Beling
Affiliation:
Physics Department, The University of Hong Kong, Hong Kong, China
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Abstract

Structural and electrical properties of beryllium implanted silicon carbide have been investigated by secondary ion mass spectrometry, Rutherford backscattering as well as deep level transient spectroscopy, resistivity and Hall measurements. Strong redistributions of the beryllium profiles have been found after a short post-implantation anneal cycle at temperatures between 1500 °C and 1700 °C. In particular, diffusion towards the surface has been observed which caused severe depletion of beryllium in the surface region. The crystalline state of the implanted material is well recovered already after annealing at 1450 °C. However, four deep levels induced by the implantation process have been detected by deep level transient spectroscopy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 572: Symposium Y – Wide-Bandgap Semiconductors for High-Power, High Frequency… , 1999 , 117
Copyright
Copyright © Materials Research Society 1999

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References

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