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Structural and Electrical Characterization of Highly Tetrahedral-Coordinated Diamond-Like Carbon Films Grown by Pulsed-Laser Deposition

Published online by Cambridge University Press:  22 February 2011

M. P. Siegal ,
T. A. Friedmann ,
S. R. Kurtz ,
D. R. Tallant ,
R. L. Simpson ,
F. Dominguez  and
K. F. McCarty
M. P. Siegal
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
T. A. Friedmann
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
S. R. Kurtz
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
D. R. Tallant
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
R. L. Simpson
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
F. Dominguez
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
K. F. McCarty
Affiliation:
Sandia National Laboratories, Livermore, CA 94551
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Abstract

Highly tetrahedral-coordinated-amorphous-carbon (a-tC) films deposited by pulsed-laser deposition (PLD) on silicon substrates are studied. These films are grown at room-temperatures in a high-vacuum ambient. a-tC films grown in this manner have demonstrated stability to temperatures in excess of T = 1000°C, more than sufficient for any post-processing treatment or application. Film surfaces are optically smooth as determined both visually and by atomic-force microscopy. PLD growth parameters can be controlled to produce films with a range of sp2 - sp3 carbon-carbon bond ratios. Films with the highest yield of sp3 C-C bonds have high resistivity, with a dielectric permittivity constant s σ 4, measured capacitively at low frequencies (1 – 100 kHz). These a-tC films are p-type semiconductors as grown. Schottky barrier diode structures have been fabricated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 349: Symposium T – Novel Forms of Carbon II , 1994 , 507
Copyright
Copyright © Materials Research Society 1994

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References

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