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Structural and dielectric proper ties of CaCu3Ti4O12 thin film. deposited using laser ablation.

Published online by Cambridge University Press:  01 February 2011

V. Gupta ,
R.R. Das ,
A. Dixit ,
P. Bhattacharya  and
R.S. Katiyar
V. Gupta
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, PR 00931
R.R. Das
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, PR 00931
A. Dixit
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, PR 00931
P. Bhattacharya
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, PR 00931
R.S. Katiyar
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, PR 00931
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Abstract

CaCu3Ti4O12 (CCT) thin films were deposited on Pt/TiO2/SiO2/Si substrates using pulsed laser deposition technique. During the thin films deposition, the substrate temperature was varied in the range of 700–800 °C with a constant O2 pressure of 200 mTorr. X-ray diffraction showed the polycrystalline nature of the films. The dielectric properties of the films were studied in metal insulator configuration. Films grown at higher substrate temperature exhibited highest value of dielectric permittivity (∼2200). Micro Raman spectroscopy was used to study the vibrational modes of the CCT thin films in comparison with the bulk ceramics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 785: Symposium D – Materials and Devices for Smart Systems , 2003 , D6.6
Copyright
Copyright © Materials Research Society 2004

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References

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