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Structrual Characterization and Raman Scattering of Epitaxial Aluminum Nitride Thin Films on Si(111)

Published online by Cambridge University Press:  25 February 2011

W. J. Meng ,
T. A. Perry ,
J. Heremans  and
Y. T. Cheng
W. J. Meng
Affiliation:
General Motors Research Laboratories, Warren, Michigan 48090
T. A. Perry
Affiliation:
General Motors Research Laboratories, Warren, Michigan 48090
J. Heremans
Affiliation:
General Motors Research Laboratories, Warren, Michigan 48090
Y. T. Cheng
Affiliation:
General Motors Research Laboratories, Warren, Michigan 48090
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Abstract

Thin films of aluminum nitride were grown epitaxially on Si(111) by ultra-high-vacuum dc magnetron reactive sputter deposition. Epitaxy was achieved at substrate temperatures of 600° C or above. We report results of film characterization by x-ray diffraction, transmission electron microscopy, and Raman scattering.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 469
Copyright
Copyright © Materials Research Society 1992

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References

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