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Strong Photon-Exciton Coupling in the Near-Field Luminescence of Semiconductor Quantum Dots

Published online by Cambridge University Press:  10 February 2011

A. M. Mintairov ,
A. S. Vlasov ,
J. L. Merz ,
O. V. Kovalenkov ,
J. P. Reynolds  and
D. A. Vinokurov
A. M. Mintairov
Affiliation:
EE Department, University of Notre Dame, Notre Dame, IN 46556, USA
A. S. Vlasov
Affiliation:
EE Department, University of Notre Dame, Notre Dame, IN 46556, USA
J. L. Merz
Affiliation:
EE Department, University of Notre Dame, Notre Dame, IN 46556, USA
O. V. Kovalenkov
Affiliation:
Ioffe Physico-Technical Institute, RAS, 194021 St. Petersburg, Russia
J. P. Reynolds
Affiliation:
EE Department, University of Notre Dame, Notre Dame, IN 46556, USA
D. A. Vinokurov
Affiliation:
Ioffe Physico-Technical Institute, RAS, 194021 St. Petersburg, Russia
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Abstract

We present low-temperature near-field scanning optical microscopy (NSOM) measurements of self-organized InP quantum dots (QD) embedded in a GaInP layer. We observed an anomalously strong increase in the emission energy (∼270 meV) of a single QD by changing the tip-to-surface distance over ∼100 nm in the near-field region. The effect indicates the formation of a near-field nanocavity having extremely high photon-exciton mixing and can be interpreted as the observation of the coupled photon-exciton pair

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