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Stress-Related Defects in Implanted Locos + Trench - Isolated Structures

Published online by Cambridge University Press:  03 September 2012

Barbara Vasquez  and
N. David Theodore
Barbara Vasquez
Affiliation:
Motorola Inc., Advanced Technology Center, 2200 W. Broadway Rd., Mesa, AZ 85202
N. David Theodore
Affiliation:
Motorola Inc., Advanced Technology Center, 2200 W. Broadway Rd., Mesa, AZ 85202
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Abstract

Poly-buffered local-oxidation of silicon + trench-isolation (PBLT) is a technique being explored for device isolation. In an earlier study, we had reported the presence of dislocations associated with a combination of high-dose (∼5E14 cm2) phosphorous implants and PBLT isolation. In the present study, the behavior of extended defects present in the structures is analyzed in greater detail. The origin and behavior of the defects is modelled to explore potential mechanisms to explain the observations. Implantation induced dislocation-loops interact with stress fields associated with PBLT isolation-trenches. Some of the implant loops (in the presence of a stress field) transform to dislocation sources which then create glide dislocations in the structures. Strategies for defect engineering are discussed, including reducing implant-induced damage (lowering the implant dose) or reducing stress fields (by moving the edge of the implanted region away from the trench). Defect densities can be reduced or eliminated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 725
Copyright
Copyright © Materials Research Society 1992

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References

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