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Stresses in Gatelevel Interconnects of Wsi2 AND TaSi2

Published online by Cambridge University Press:  28 February 2011

P. H. Townsend ,
R. T. Fulks ,
H. A. Vander Plas  and
J. Ho
P. H. Townsend
Affiliation:
Dept. of Maicrials Science. Stanford University, Stanford CA 94305
R. T. Fulks
Affiliation:
Xerox PARC, 3333 Coyote Hill Rd., Palo Alto CA 94304
H. A. Vander Plas
Affiliation:
Xerox PARC, 3333 Coyote Hill Rd., Palo Alto CA 94304
J. Ho
Affiliation:
Dept. of Maicrials Science. Stanford University, Stanford CA 94305
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Abstract

Stresses in WSi2 films prepared by chemical vapor deposition have been examined using an optically levered laser beam during typical processing cycles to 900 C. Initial heating produces tensile stress levels of 1.0 GPa at 500 C with crystallization into the inetastable hexagonal form. Cooling from this temperature results in room temperature stresses of 1.2 GPa. A large decrease in the tensile stress level accompanies the transformation into the stable tetragonal structure during heating from 500 C to 750 C. Films in this form are mechanically stable and respond elastically to further thermal cycling.

Films of TaSi2 sputtered from an intermetallic target and co-sputtered from elemental targets have also been investigated. Initial heating of films sputtered from the intermetallic target produces a tensile stress state during crystallization which is high but slightly less than observed during crystallization of WSi2. This high tensile state is not observed in films deposited in layers from elemental targets. The appearance of a metastable phase is not observed for intermediate anneals in either case. The initial crystallization results in the stable phase of hexagonal TaSi2. Fully annealed films are elastic below 920 C.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 71: Symposium F – Materials Issues in Silicon Integrated Circuit Processing , 1986 , 395
Copyright
Copyright © Materials Research Society 1986

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