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Stress-Assisted Diffusion of Boron and Arsenic in Silicon

Published online by Cambridge University Press:  21 February 2011

Michael L. Manda ,
M. L. Shepard ,
R. B. Fair  and
H. Z. Massoud
Michael L. Manda
Affiliation:
Duke University, Department of Mechanical Engineering and Materials Science, Durham, North Carolina 27706
M. L. Shepard
Affiliation:
Duke University, Department of Mechanical Engineering and Materials Science, Durham, North Carolina 27706
R. B. Fair
Affiliation:
Duke University, Department of Electrical Engineering, Durham, North Carolina 27706
H. Z. Massoud
Affiliation:
Duke University, Department of Electrical Engineering, Durham, North Carolina 27706
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Abstract

The diffusion of B and As in mechanically strnsed silicon has been investigated for initial implant doses of 1013, 1014, and 1015 cm-2, over a range of annealing temperatures. At stresses near the silicon yield point, no significant enhancement or retardation was observed. This was true even in plastically deformed samples with dislocation densities >1×107 cm-2. The results are consistent with the multiple charge state vacancy model of impurity diffusion in silicon. The B diffusivity appears to agree with the accepted activation energy of 3.59 eV and pre-exponential of 3.17 cm2/sec for intrinsic B diffusion.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 36: Symposium C – Impurity Diffusion and Gettering in Silicon , 1984 , 71
Copyright
Copyright © Materials Research Society 1985

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References

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