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Stress Relaxation During Diffusional Phase Transformation Under Induced Thermal Stress

Published online by Cambridge University Press:  15 February 2011

E C Zingu  and
B T Mofokeng
E C Zingu
Affiliation:
Department of Physics, Medunsa, 0204, South Africa
B T Mofokeng
Affiliation:
Department of Physics, Medunsa, 0204, South Africa
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Abstract

Thermal mismatch between the expansion coefficients of a substrate and deposited thin film gives rise to extrinsic stress in the film. Different stress states are induced into the Co/Si thin film combination by depositing the multi-layers on Al and Si substrates respectively. Interdiffusion at 360°C is found to be influenced by the extrinsic stress in the films. The difference in Co2Si growth rate on different substrates is ascribed to the difference in composition (Co molar fraction) at the Co/Co2Si and Co2Si/Si interfaces due to different stress states.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 308: Symposium M1 – Thin Films: Stresses and Mechanical Properties IV , 1993 , 85
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1 Fargeix, A. and Ghibaudo, G., J. Appl. Phys. 56, 589 (1984).CrossRefGoogle Scholar
2 Karpe, N., Kyllesbech Larsen, K. and Bottiger, J., Phil. Mag. B 66, 507 (1992).CrossRefGoogle Scholar
3 Apblett, C. A. and Ficalora, P.J., Mat. Res. Soc. Symp. 239, 99 (1992).CrossRefGoogle Scholar
4 Xia, W., Hewett, C., Fernandes, M. and Lau, S. S., J. Appl. Phys. 65, 2300 (1989).CrossRefGoogle Scholar
5 Gösele, U. and Tu, K. N., J. Appl. Phys. 53, 3252 (1982).CrossRefGoogle Scholar
6 Johnson, W. C. and Chiang, C. S., J. Appl. Phys. 64, 1155, (1988).CrossRefGoogle Scholar
7 Lau, S. S., Mayer, J.W. and Tu, K. N., J. Appl. Phys. 49, 4005 (1978).CrossRefGoogle Scholar