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Strength of Coherently Strained Nanolayers Under HighTemperature Nanoindentation

Published online by Cambridge University Press:  26 February 2011

Mok Yew P'ng ,
X. D. Hou ,
D. J. Dunstan  and
A. J. Bushby
Mok Yew P'ng
Affiliation:
m.y.png@qmul.ac.uk, Queen Mary, University of London, Materials, Materials Department,, Queen Mary, University of London,, Mile End Road, London, E1 4NS, United Kingdom, 44 (0)2078823762
X. D. Hou
Affiliation:
x.hou@qmul.ac.uk, Queen Mary, University of London, Centre of Materials Research, Mile End Road, London, E1 4NS, United Kingdom
D. J. Dunstan
Affiliation:
D.Dunstan@qmul.ac.uk, Queen Mary, University of London, Centre of Materials Research, Mile End Road, London, E1 4NS, United Kingdom
A. J. Bushby
Affiliation:
A.J.Bushby@qmul.ac.uk, Queen Mary, University of London, Centre of Materials Research, Mile End Road, London, E1 4NS, United Kingdom
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Abstract

Semiconductor strained layer superlattices are an ideal model material tostudy the effects of coherency strain in plasticity, due to the fine controlof nanolayer thickness and internal strain afforded by MBE deposition.Previously, nanoindentation of bulk InGaAs at 300K gave a yield pressure of6GPa (Jayawera et al Proc. Roy Soc, A459, 2049, 2003) while bending at 500centigrade gave a yield value of 30MPa (Pp’ ng et al Phil. Mag. 85, 4429,2005). In contrast, coherently strained InGaAs superlattices gavenanoindentation values of 3GPa at room temperature and bending at 500oC gavea yield value also around 3GPa. It appears that the coherency strain canimpart an athermal strengthening to the superlattice. It is clearlynecessary to do mechanical testing over the range 300-800K that will be ableto link the room temperature nanoindentation with the results from the hightemperature bending experiment and to determine the relationship betweenstrength, coherency strain and temperature. Preliminary experiments on thesesamples at elevated temperatures using a hot stage and the UMISnanoindentation system is difficult but feasible with the help of AFM toverify the contact area.

Keywords

III-Vstrengthnanostructure

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References

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