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Strain-Related Excitonic In-Plane Optical Anisotropy in (100) InGaAs/InAlAs/InP MQW

Published online by Cambridge University Press:  03 September 2012

A. Dimoulas ,
R. Tober ,
R. Leavitt ,
T. Feng  and
A. Christou
A. Dimoulas
Affiliation:
University of Maryland, Dptm. of Materials & Nuclear Engineering, College Park, MD 20742.
R. Tober
Affiliation:
U.S. Army Research Laboratory, 2800 Powder Mill Road, Adelphi, MD 20783.
R. Leavitt
Affiliation:
U.S. Army Research Laboratory, 2800 Powder Mill Road, Adelphi, MD 20783.
T. Feng
Affiliation:
University of Maryland, Dptm. of Materials & Nuclear Engineering, College Park, MD 20742.
A. Christou
Affiliation:
University of Maryland, Dptm. of Materials & Nuclear Engineering, College Park, MD 20742.
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Abstract

Strained (x=0.48) and lattice-matched (x=0.53) InxGal-xAs/InAlAs/InP (100) MQWs have been investigated by photoreflectance. In the strained sample the relative intensities of the light-hole and heavy-hole excitonic transitions is different for the two different polarizations of the incident light parallel and perpendicular to the ]0-1-1 ] direction. This polarization anisotropy is explained in terms of the spontaneous formation of “quantum wires” and the presence of anisotropic strain due to spinodal-like phase decomposition of the InGaAs alloy in In-rich and Ga-rich regions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 448: Symposium M – Control of Semiconductor Surfaces and Interfaces , 1996 , 463
Copyright
Copyright © Materials Research Society 1997

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