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Strained Quantum Dots in Porous Silicon

Published online by Cambridge University Press:  28 February 2011

Xue-Shu Zhao ,
Peter D. Persans ,
John Schroeder  and
Yeun-Jung Wu
Xue-Shu Zhao
Affiliation:
Physics Department and Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY. 12180
Peter D. Persans
Affiliation:
Physics Department and Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY. 12180
John Schroeder
Affiliation:
Physics Department and Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY. 12180
Yeun-Jung Wu
Affiliation:
Physics Department and Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY. 12180
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Abstract

On the basis of Raman, photoluminescence, and absorption studies of porous and nanoparticle silicon we propose that the strong luminescence in porous silicon results from strained silicon quantum dots. A silicon nanoparticle is a special Jahn-Teller system induced by extended electron states rather than localized state. Thus Raman scattering and photoluminescence in porous silicon are multi-phonon assisted free electronic transition processes, all observed anomalous properties of porous silicon can be clearly explained by using this strained quantum dot model.

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References

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