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Strained Linbo3/Sapphire Heterostructures Grown by Pulsed Laser Deposition

Published online by Cambridge University Press:  15 February 2011

Yoshihiko Shibata ,
Naohiro Kuze ,
Masahiro Matsui ,
Masaki Kanai  and
Tomoji Kawai
Yoshihiko Shibata
Affiliation:
Central Laboratory, Asahi Chemical Industry Co., Ltd. Samejima, Fuji, Shizuoka, 416, Japan
Naohiro Kuze
Affiliation:
Central Laboratory, Asahi Chemical Industry Co., Ltd. Samejima, Fuji, Shizuoka, 416, Japan
Masahiro Matsui
Affiliation:
Central Laboratory, Asahi Chemical Industry Co., Ltd. Samejima, Fuji, Shizuoka, 416, Japan
Masaki Kanai
Affiliation:
The Institute of Scientific and Industrial Research, Osaka University, Mihogaoka, Ibaraki, Osaka, 567, Japan
Tomoji Kawai
Affiliation:
The Institute of Scientific and Industrial Research, Osaka University, Mihogaoka, Ibaraki, Osaka, 567, Japan
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Abstract

Thin LiNbO3 films are deposited on (001) sapphire substrates by Ar F pulsed laser ablation. The films are evaluated by X-ray diffraction analysis at various temperatures, as well as high-resolution transmission electron microscopy (TEM). The deposited films are highly epitaxial but that are strained, that is, the a-axis is longer and the c-axis is shorter than those of LiNbO3 single crystals. X-ray diffraction analysis at deposition temperature, as well as TEM show that the strain is caused by the difference in thermal expansion coefficients between LiNbO3 and sapphire substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 397: Symposium B – Advanced laser Processing of Materials-Fundamentals and Applications , 1995 , 199
Copyright
Copyright © Materials Research Society 1996

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References

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