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Strain Relief Mechanisms and Nature of Misfit Dislocations in GaAs/Si Heterostructures

Published online by Cambridge University Press:  22 February 2011

S. Sharan ,
J. Narayan ,
J. P. Salerno  and
J. C. C. Fan
S. Sharan
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, N. C. 27695-7916
J. Narayan
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, N. C. 27695-7916
J. P. Salerno
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, N. C. 27695-7916
J. C. C. Fan
Affiliation:
Kopin Corp. Taunton, Mass 02780
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Abstract

The nucleation and glide of misfit dislocations in GaAs/Si system is investigated using transmission electron microscopy. GaAs epilayers of different thicknesses were examined by electron microscopy (plan and cross-section) and the elastic strain remaining in the film has been related to the average spacing of the misfit dislocations at the interface. A model is developed based on minimum energy considerations to determine the strain-thickness relationship. The theoretical predictions of strain relaxation are compared with experimental observations using high resolution electron microscopy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 130: Symposium C – Thin Films: Stresses and Mechanical Properties I , 1988 , 153
Copyright
Copyright © Materials Research Society 1989

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