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Steady State Photocarrier Charge Collection in a-Si:H for Electrons and Holes

Published online by Cambridge University Press:  21 February 2011

C.-D. Abel ,
H. R. Paes  and
G. H. Bauer
C.-D. Abel
Affiliation:
Institut fur Physikalische Elektronik, Universitat Stuttgart, Pfaffenwaldring 47, D-7000 Stuttgart-80, F.R., Germany
H. R. Paes
Affiliation:
COPPE / PEMM Universidade Federal, Rio de Janeiro, Brasil
G. H. Bauer
Affiliation:
Institut fur Physikalische Elektronik, Universitat Stuttgart, Pfaffenwaldring 47, D-7000 Stuttgart-80, F.R., Germany
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Abstract

Carrier transport in amorphous silicon pin-diodes has been analyzed by steady state photocarrier charge collection applying strongly absorbed light. For low intensities at room temperature electron charge collection is limited by recombination in the generation region. For increasing intensity ø and/or decreasing temperature charge collection becomes nonlinear in ø and shows S-like characteristics versus voltage.

We present a model for this behaviour, including space charge limitation which e.g. for holes in a-Si:H limits charge collection even at room temperature due to low extended state mobility of holes and dark Fermi level position above midgap.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 851
Copyright
Copyright © Materials Research Society 1991

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References

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