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The Staebler-Wronski Effect and 1/f Noise in Amorphous Silicon

Published online by Cambridge University Press:  17 March 2011

T. J. Belich  and
J. Kakalios
T. J. Belich
Affiliation:
School of Physics and Astronomy, University of Minnesota, Minneapolis, MN 55455
J. Kakalios
Affiliation:
School of Physics and Astronomy, University of Minnesota, Minneapolis, MN 55455
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Abstract

Experimental measurements of the Q-function (a comparison of the conductivity and thermopower activation energies) and the non-Gaussian statistical character of the 1/f noise in n-type doped a-Si:H as a function of light soaking (the Staebler-Wronski effect) are reported. There is a significant decrease in the non-Gaussian statistical character of the 1/f noise following light soaking of a device quality film, consistent with a slight increase in the long-range disorder. However, there is no change in the Q-function following light exposure, indicating that there is no significant increase in the long-range disorder.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 664: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2001 , 2001 , A14.5
Copyright
Copyright © Materials Research Society 2001

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