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Stabilization of Porous Silicon Electroluminescence by Surface Capping With Silicon Dioxide Films

Published online by Cambridge University Press:  17 March 2011

N. Koshida ,
J. Kadokura ,
M. Takahashi  and
K. Imai
N. Koshida
Affiliation:
Dept of Electrical and Electronic Engineering, Tokyo University of A&T, Tokyo, Japan
J. Kadokura
Affiliation:
Dept of Electrical and Electronic Engineering, Tokyo University of A&T, Tokyo, Japan
M. Takahashi
Affiliation:
NTT Telecommunications Energy Laboratories, Atsugi, Kanagawa, Japan
K. Imai
Affiliation:
NTT Telecommunications Energy Laboratories, Atsugi, Kanagawa, Japan
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Abstract

To prolong the operation life of electroluminescence (EL) from porous silicon (PS) diodes without affect on the efficiency, the surface passivation technique is applied to the active PS layer. By combining a postanodization electrochemical oxidation (ECO) technique for the PS layer with a surface capping by SiO2 films sputtered using electron cyclotron resonance (ECR) method, the degradation of the EL efficiency is effectively suppressed for a long time over several hours under a cw operation. It is shown that from thermal desorption spectra analyses, the capability of capped films as a barrier against penetration of water molecules is a key factor for stabilizing the EL operation due to preventing luminescent PS layers from current-induced oxidation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 638: Symposium F – Microcrystaline & Nanocrystalline Semiconductors-2000 , 2000 , F18.3.1
Copyright
Copyright © Materials Research Society 2001

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References

1. Koshida, N. and Koyama, H., Appl. Phys. Lett. 60, 347 (1992).Google Scholar
2. Gelloz, B. and Koshida, N., J. Appl. Phys. 88, 4391 (2000).Google Scholar
3. Gelloz, B., Nakagawa, T., and Koshida, N., Mat.Res.Soc.Symp.Proc. 536, 15 (1999).Google Scholar
4. Gelloz, B., Nakagawa, T., and Koshida, N., Appl. Phys. Lett. 73, 2021 (1998).Google Scholar
5. Buriak, J.M. and Allen, M.J., J. Amer. Chem. Soc. 120, 1339 (1998).Google Scholar
6. Boukherroub, R., Morin, S., Wayner, D.D.M., and Lockwood, D.J., phys.stat.sol. (a) 182, 117 (2000).Google Scholar
7. Amazawa, T., Ono, T., Shimada, M., Matsuo, S., and Oikawa, H., J. Vac. Sci. Technol. B 17(5), 2222 (1999).Google Scholar
8. Lazarouk, S., Jaguiro, P., Katsouba, S., Masini, G., Monica, S. La, Maiello, G., and Ferrari, A., Appl. Phys. Lett. 68, 2108 (1996).Google Scholar