Hostname: page-component-745bb68f8f-hvd4g Total loading time: 0 Render date: 2025-01-28T23:52:58.458Z Has data issue: false hasContentIssue false
  • English
  • Français

The Stability of TiH2 Used as Diffusion Barrier on SiO2 Substrates

Published online by Cambridge University Press:  25 February 2011

Shyam P. Murarka ,
Sen-Hou Ko ,
Pei-Jun Ding  and
William A. Lanford
Shyam P. Murarka
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180
Sen-Hou Ko
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180
Pei-Jun Ding
Affiliation:
Department of Physics, University at Albany, Albany, NY 12222
William A. Lanford
Affiliation:
Department of Physics, University at Albany, Albany, NY 12222
Get access

Abstract

TiH2 has been considered as a diffusion barrier and adhesion promoter between oxide and Cu. This phase is formed by reaction of Ti with hydrogen during rapid thermal annealings. In this investigation the stability of TiH2 on PECVD and thermal oxides has been studied during Ar anneal at 400 and 500°C. X-ray diffraction, sheet resistance measurements, RBS, and nuclear reaction technique to profile hydrogen have been used in this study. The results indicate that the stability of TiH2 is dependent on the nature of the oxide, for example, the water concentration and the density of the oxide and on the temperature of the anneal. These results will be discussed in view of the applicability of TiH2 which has a low thin film electrical resistivity of about 100 μΩ-cm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 337: Symposium B – Advanced Metallization for Devices and Circuits—Science, Technology and Manufacturing III , 1994 , 217
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Taubenblatt, M. A. and Helms, C. R., J. Appl. Phys. 53, 6308 (1982).CrossRefGoogle Scholar
2 Apblett, C., Ph.D. Thesis (RPI, Troy, 1992).Google Scholar
3 Apblett, C., Muira, D., Sullivan, M., and Ficalora, P. J., J. Appl. Phys. 71, 4926 (1992).Google Scholar
4 Ko, S.-H., Devashrayee, N. M., Murarka, S. P., Ding, P.-J., and Lanford, W. A., Mat. Res. Soc. Symp. Proc. 260, 665 (1992).CrossRefGoogle Scholar
5 Bhushan, B., Murarka, S. P., and Gerlach, J., J. Vac. Sci. Technol. B8, 1068 (1990)Google Scholar
6 Lanford, W. A., Trautvetter, H. P., Ziegler, J. F., and Keller, J., Appl. Phys. Lett 28, 566 (1976).CrossRefGoogle Scholar