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SrTiO3 Films Prepared by MOCVD Using Novel Sr Source

Published online by Cambridge University Press:  15 February 2011

Hideaki Yamauchi ,
Takafumi Kimura  and
Masao Yamada
Hideaki Yamauchi
Affiliation:
Fujitsu Ltd., 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
Takafumi Kimura
Affiliation:
Fujitsu Ltd., 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
Masao Yamada
Affiliation:
Fujitsu Ltd., 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
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Abstract

SrTiO3 thin films have been prepared by MOCVD. A novel Sr source of Sr(DPM)2-tetraen2 was used to stabilize source delivery and to reduce the vaporization temperature of Sr source. Films were deposited on Pt/Ta/Si substrates at deposition temperatures from 450 °C to 600 °C. The relative dielectric constant was about 220 at the deposition temperatures from 550 °C to 600 °C for as-deposited 90-nm-thick films. The leakage current density was in the range of 10−7 A/cm2, typically.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 361: Symposium I2 – Ferroelectric Thin Films IV , 1994 , 287
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

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