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Solid-Phase Epitaxy - Role of Point Defects in Amorphous Solids

Published online by Cambridge University Press:  21 February 2011

T.K. Chaki
T.K. Chaki*
Affiliation:
State University of New York, Department of Mechanical Engineering and Center for Electronic & Electro-optic Materials, Buffalo, NY 14260
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Abstract

A model of solid-phase epitaxial growth (SPEG), explaining enhancing effects of ion-irradiation and dopants, is presented. The crystallization is by the adjustment of atomic positions in the amorphous side of the crystalline/amorphous (c-a) interface due to self-diffusion in the amorphous solid, assisted by a freeenergy decrease associated with the transformation from the amorphous (a) to crystalline (c) phase. Irradiation and electrically active dopants increase the selfdiffusivity of a-phase by generating point defects in the amorphous layer and thus enhance crystallization. An expression for the velocity of epitaxial growth is derived. The low activation energy of ion-induced SPEG is due to recombination of point defects in the a-phase.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 319: Symposia CB – Defect-Interface Interactions , 1993 , 411
Copyright
Copyright © Materials Research Society 1994

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