Hostname: page-component-745bb68f8f-b6zl4 Total loading time: 0 Render date: 2025-01-27T13:35:41.196Z Has data issue: false hasContentIssue false
  • English
  • Français

Solid State Amorphization in the Interfacial Reactions of Yttrium Thin Films on (111)Si

Published online by Cambridge University Press:  21 February 2011

T.T. Lee  and
L.L. Chen
T.T. Lee
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
L.L. Chen
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
Get access

Abstract

Interfacial reactions of ultrahigh vacuum deposited yttrium thin films on atomically clean (111)Si at low temperatures have been studied by both conventional and high resolution transmission electron microscopy, Auger electron spectroscopy and x-ray diffraction. A 10–nm–thick yttrium thin film, deposited onto (lll)Si at room temperature, was found to completely intermix with Si to form an 11–nm–thick amorphous interlayer. Crystalline Y5Si3 and Si were observed to nucleate first within the amorphous interlayer in samples annealed at temperatures lower than 200 °C. Epitaxial YSi2−x was found to be the only phase formed at the interface of amorphous interlayer and crystalline Si in samples annealed at temperatures higher than 250 °C. In as deposited 20– to 60–nm thick Y thin films on silicon samples, crystalline Y5Si3, Si, and YSi and a 2.5–nm–thick amorphous layer were found to be present simultaneously.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 311: Symposium O – Phase Transformations in Thin Films–Thermodynamics and Kinetics , 1993 , 91
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Schwarz, R.B. and Johnson, W.L., Phys. Rev. Lett. 51, 415 (1983).CrossRefGoogle Scholar
2 Johnson, W.L., Progr. Mater. Sci. 30, 81 (1986).Google Scholar
3 Chen, L.J., Wu, I.W., Chu, J.J., and Nieh, C.W., J. Appl. Phys. 63, 2778 (1988).Google Scholar
4 Morgan, A.E., Broadbent, E.K., Ritz, K.N., Sandana, D.K., and Burrow, B.J., J. Appl. Phys. 64, 344 (1988).Google Scholar
5 Abelson, J.R., Kim, K.B., Mercer, D.E., Helms, C.R., Sinclair, R., and Sigmon, T.W., J. Appl. Phys. 63, 689 (1988).Google Scholar
6 Lur, W. and Chen, L.J., Appl. Phys. Lett. 54, 1217 (1989).Google Scholar
7 Cheng, J.Y. and Chen, L.J., J. Appl. Phys. 68, 4002 (1990).Google Scholar
8 Cheng, J.Y. and Chen, L.J., J. Appl. Phys. 69, 2161 (1991).Google Scholar
9 Tu, K.N., Thompson, R.D., and Tsaur, B.Y., Appl. Phys. Lett. 38, 626 (1981).Google Scholar
10 Norde, H., Pires, J. deSousa, d'Heurle, F., Pesavento, F., Petersson, S., and Tove, P.A., Appl. Phys. Lett. 38, 865 (1981).Google Scholar
11 Alford, T.L. and Mayer, J.W., Appl. Phys. Lett. 59, 2989 (1991).Google Scholar
12 Miedema, A.R., Chatel, P.F. de, and Boer, F.R. de, Physica B 100, 1 (1980).CrossRefGoogle Scholar
13 Herd, S., Tu, K.N., and Ahn, K.Y., Appl. Phys. Lett. 42, 597 (1983).Google Scholar
14 d'Heurle, F.M. and Gas, P., J. Mater. Res. 1, 205 (1986).Google Scholar
15 Baglin, J.E.E., d'Heurle, F.M., and Petersson, C.S., J. Appl. Phys. 52, 2841 (1981).Google Scholar