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Smoothing Effects of MOCVD Grown GaAs/AlxGa1−xAs Superlattices1

Published online by Cambridge University Press:  21 February 2011

Xian-gang Xu ,
Bai-biao Huang ,
Shi-wen Liu ,
Hong-wen Ren  and
Min-hua Jiang
Xian-gang Xu
Affiliation:
Institute of Crystal Materials, Shandong Univ., Jinan, P.B. China, 250100.
Bai-biao Huang
Affiliation:
Institute of Crystal Materials, Shandong Univ., Jinan, P.B. China, 250100.
Shi-wen Liu
Affiliation:
Institute of Crystal Materials, Shandong Univ., Jinan, P.B. China, 250100.
Hong-wen Ren
Affiliation:
Institute of Crystal Materials, Shandong Univ., Jinan, P.B. China, 250100.
Min-hua Jiang
Affiliation:
Institute of Crystal Materials, Shandong Univ., Jinan, P.B. China, 250100.
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Abstract

GaAs/AlxGa1-xAs (x=0.5, 0.6, 1.0) superlattices used as buffer layers in HEMT devices have been grown by Metalorganic Chemical Vapor Deposition (MOCVD) at. atmospheric pressure, and characterized by cross-sectional transmission electron microscopy (XTEM). The initial stage of nucleation on the substrates has been clearly verified by examining the undulations of a 30na GaAs layer sandwiched between the substrate and the superlattice. Both Alo.5Gao.5As/GaAs and AlAs/GaAs superlattices can smooth out interface roughness caused by contaminations and dislocations on the substrate surface. The mechanism of smoothing effect has been discussed in detail.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 237: Symposium Ca – Interface Dynamics and Growth , 1991 , 595
Copyright
Copyright © Materials Research Society 1992

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Footnotes

1

Work supported by the National Natural Science Foundation of China.

References

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