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Silicon Electromachining Processes in Aqueous Solutions

Published online by Cambridge University Press:  10 February 2011

M. Kovler ,
D. Starosvetsky ,
Y. Nemirovsky  and
J. Yahalom
M. Kovler
Affiliation:
Materials Eng. Department, Technion - Israel Institute of Technology, Haifa, Israel 32000
D. Starosvetsky
Affiliation:
Materials Eng. Department, Technion - Israel Institute of Technology, Haifa, Israel 32000
Y. Nemirovsky
Affiliation:
Electnrcal Eng. Department, Technion - Israel Institute of Technology, Haifa, Israel 32000
J. Yahalom
Affiliation:
Materials Eng. Department, Technion - Israel Institute of Technology, Haifa, Israel 32000
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Abstract

High rate of etching of silicon was obtained by non conventional cathodic polarization in alkaline solutions. When the process was carried out at potentials more negative than −10 V it caused electropolishing of the etched surface. Shifting the potential in the cathodic direction increases the etch-rate parabolically and enhances the effect of polishing. The etch-rate increased by more than two orders of magnitude over the potential range from −10 to −40 V, and reached the value of about 250 micron/hour at 60 °C. Additionally, the etch-rate of n-Si was found to be markedly enhanced by illumination.

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