Hostname: page-component-745bb68f8f-lrblm Total loading time: 0 Render date: 2025-02-08T19:36:01.410Z Has data issue: false hasContentIssue false
  • English
  • Français

Silicon Consumption During Self-Aligned Titanium Suicide Formation on Shallow Junctions

Published online by Cambridge University Press:  28 February 2011

P.L. Smith ,
C.M. Osburn ,
D.S. Wen  and
G. McGuire
P.L. Smith
Affiliation:
MCNC, P.O. Box 12889, Research Triangle Park, NC 27709
C.M. Osburn
Affiliation:
MCNC, P.O. Box 12889, Research Triangle Park, NC 27709 Department of Electrical & Computer Engineering, North Carolina State University, Raleigh, NC 27695
D.S. Wen
Affiliation:
Currently at IBM T.J. Watson Research center, Yorktown, Heights NY 10598
G. McGuire
Affiliation:
MCNC, P.O. Box 12889, Research Triangle Park, NC 27709
Get access

Abstract

The self-aligned-silicide (SALICIDE) process was developed to overcome the conductivity and contact resistance limitations associated with very shallow junctions. However this process is fundamentally limited by the roughening and the consumption of the silicon substrate that occurs during its selective reaction with metal. As junctions scale to smaller dimensions, me silicon consumption must also be scaled so mat the suicide does not consume the junction. The use of argon gas atmospheres during titanium suicide formation leads to more silicon consumption (75%) than can be explained simply on the basis of suicide formation. Lateral loss of silicon into the metal surrounding patterns is believed to be the mechanism responsible for this excess silicon consumption. More surprisingly, nitrogen annealing, which suppresses lateral suicide formation, also leads to an anomalously large (50%) silicon consumption. Suicides formed on amorphous substrates during the concurrent formation of junctions and suicides result in even more silicon consumption.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 299
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1Osbum, C.M., Tsai, M.Y., Roberts, S., Lucchese, C.J., and Ting, C.Y., Proc. 1st Inter. Symp. on VLSI Science and Tecbnol, Electrocbem. Soc. Proc. 82 (7), 213, (1982).Google Scholar
2Amano, J., Mauka, K., Scott, M. P., Turner, J.E., and Tasi, R., Appl. Phys. Lett., 49 (12), 737, (1986).Google Scholar
3Cohen, C., NipotiC, R., Siejka, J., Bentini, G.G., Berti, M., and Drigo, A.V., J. Appl. Phys., 61 (11), 5187, (1987).Google Scholar
4Flutie, R.E., Mat Res. Soc. Symp. Proc. vol.62 (1986).Google Scholar
5Berger, H. and Lin, S.-Y., Proc. 1st Inter. Conf. ULSI Sci. and Tech., Electrochem. Soc., 87–11,434 (1987).Google Scholar
6Haken, R.A., J. Vac. Sci. Technol., B3 (6), 1657, (1985).Google Scholar