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Silicide Formation and Thermal Stability of Ni/Si/GaAs Interface

Published online by Cambridge University Press:  28 February 2011

Y. Yamamoto ,
K. Ishibashi ,
S. Suzuki  and
T.E. Shim
Y. Yamamoto
Affiliation:
Research Center of Ion Beam Technology, Hosei University, 3-7-2 Kajino-cho, Koganei, Tokyo 184, Japan
K. Ishibashi*
Affiliation:
Research Center of Ion Beam Technology, Hosei University, 3-7-2 Kajino-cho, Koganei, Tokyo 184, Japan
S. Suzuki
Affiliation:
Advanced Materials Laboratory, Inc., 4-1-8 Yoshi-machi, Soka, Saitama 340, Japan
T.E. Shim*
Affiliation:
Science and Engineering, Waseda University, 3-7-2 Ohkubo, Shinjuku, Tokyo 170, Japan
*
Present address: ANELVA Corporation, Figuchu, Tokyo 183, Japan
Present address: Samsung Electronics, Seoul, Korea
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Abstract

The suicide formation and thermal stability of the Ni/Si/GaAs structures have been investigated. Vacuum deposited Ni and Si onto a (100) GaAs were annealed at temperatures between 500 °C and 650 °C. In the case that the relative amount of Ni and Si was unity, a stoichiometric NiSi was formed and silicide/GaAs interface was quite stable. The Stoichiometric NiSi did not decompose into NiSi2 and Ni at a temperature of 650 °C. When Ni was in excess in amount for the formation of stoichiometric nickel suicides, free Ni atoms were generated, resulting in unstable interfaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 337
Copyright
Copyright © Materials Research Society 1990

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References

1Hashimoto, N. and Nakashima, H., J. Appl. Phys. 61, 220 (1987)Google Scholar
2Clememt, M., Sanz, J.M. and Mart-Nez-Duart, J.M., Surf. Interface Anal. 14, 413 (1989)Google Scholar
3Shim, T.E. and Itoh, T., Yamamoto, Y., and Suzuki, S., Appl. Phys. Lett. 48, 641 (1986)Google Scholar
4Yamamoto, Y., Fujita, S., Takada, H., Segawa, Y. and Ishibashi, K., and Shim, T.E. and Itoh, T., and Suzuki, S., Nucl. Instr. and Meth. B19/20, 392 (1987)Google Scholar
5Greiner, M.E. and Gibbons, J.F., Appl. Phys. Lett. 44, 750 (1984)Google Scholar
6Roth, J.A. and Crowell, C.R., J. Vac. Sci. Technol. 15, 1317 (1978)Google Scholar
7Murarka, S.P., Read, M.H., Doherty, C.J., and Fraster, D.B., J. Electrochem. Soc. 129, 293 (1982)Google Scholar
8Olowolafe, J.O., Nicolet, M.A. and Mayer, J.W., Thin Solid Films 38, 143 (1976)Google Scholar
9Lien, C.D., Nicolet, M.A. and Lau, S.S., Phys. Status Solidi A,81, 123 (1984)Google Scholar
10Lien, C.D., Nicolet, M.A. and Lau, S.S., Thin Solid Films 143, 63 (1986)Google Scholar