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Silicate interface formation during the deposition of Y2O3 on Si

Published online by Cambridge University Press:  01 February 2011

C. Durand ,
C. Vallée ,
C. Dubourdieu ,
M. Bonvalot ,
E. Gautier  and
O. Joubert
C. Durand
Affiliation:
Laboratoire des Technologies de la Microélectronique (LTM/CNRS), 17 avenue des Martyrs (CEA-LETI), 38054 Grenoble Cedex 9, France.
C. Vallée
Affiliation:
Laboratoire des Technologies de la Microélectronique (LTM/CNRS), 17 avenue des Martyrs (CEA-LETI), 38054 Grenoble Cedex 9, France.
C. Dubourdieu
Affiliation:
Laboratoire des Matériaux et du Génie Physique, UMR-CNRS 5628, ENSPG, BP 46, 38402, Saint Martin d'Hères cedex, France.
M. Bonvalot
Affiliation:
Laboratoire des Technologies de la Microélectronique (LTM/CNRS), 17 avenue des Martyrs (CEA-LETI), 38054 Grenoble Cedex 9, France.
E. Gautier
Affiliation:
Institut des Matériaux de Nantes (IMN), 2 rue de la Houssinière, BP 32229, 44322 Nantes cedex, France
O. Joubert
Affiliation:
Laboratoire des Technologies de la Microélectronique (LTM/CNRS), 17 avenue des Martyrs (CEA-LETI), 38054 Grenoble Cedex 9, France.
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Abstract

The interface behaviour during PE-MOCVD deposition of Y2O3 thin films on Si/SiO2 (8 Å) substrates has been investigated by XPS, TEM and OES analysis. The deposition process involves the sequential injection of MO precursors into the CVD chamber and is assisted by an O2 plasma. The injection frequency greatly influences the interface behaviour in terms of thickness and composition. The O2 plasma and the solvent also greatly affect substrate oxidation, and subsequently interface formation during deposition. Several mechanisms are discussed to account for substrate oxidation in view of a careful control of interface formation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 786: Symposium E – Fundamentals of Novel Oxide/Semiconductor Interfaces , 2003 , E6.15
Copyright
Copyright © Materials Research Society 2004

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References

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