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Si-Induced AlGaAs/GaAs Superlaitce Disordering Using a Grown-In Impurity Source and the Effects of Annealing Ambient

Published online by Cambridge University Press:  22 February 2011

B.L. Olmsted  and
S.N. Houde-Walter
B.L. Olmsted
Affiliation:
The Institute of Optics, University of Rochester, Rochester, NY 14627
S.N. Houde-Walter
Affiliation:
The Institute of Optics, University of Rochester, Rochester, NY 14627
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Abstract

We report on a study of the role of defect diffusion from the crystal surface in the disordering of a multiple quantum well structure that was Si-doped during MBE growth. The distribution of native defects was inferred from correlating the results of photoluminescence spectroscopy, secondary ion mass spectrometry, and electrochemical C-V profiling. No significant change was observed between the Al-Ga interdiffusion coefficients of Si-doped and undoped superlattices when annealed with excess Ga. This is attributed to the lack of a source of group III vacancies. Furthermore, only a small fraction of the enhancement predicted for the Si doping was observed when excess As was used instead. The largest Fermi-level enhancement was observed when no excess Ga or As was included in the evacuated ampoule. The results indicate that the crystal surface was the source and sink of the native defects known to mediate the Al-Ga interdiffusion. Furthermore, significant electrical compensation of the donors was observed after both As- and Ga-rich anneals. This is attributed to ionized group III vacancy generation in the former case, and Si atoms moving from group In to V sites in the later.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 300: Symposium D1 – III-V Electronic and Photonic Device Fabrication and Performance , 1993 , 415
Copyright
Copyright © Materials Research Society 1993

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References

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