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SiGe pMOSFETs Fabricated on Limited Area SiGe Virtual Substrates

Published online by Cambridge University Press:  11 February 2011

Andrew Waite ,
Urs Straube ,
Neil Lloyd ,
Sally Croucher ,
Yue Teng Tang ,
Bifeng Rong ,
Alan Evans ,
Tim Grasby ,
Terry Whall  and
Evan Parker
Andrew Waite
Affiliation:
University of Southampton, Dept. of Electronics and Computer Science, Southampton, SO171BJ, United Kingdom.
Urs Straube
Affiliation:
University of Southampton, Dept. of Electronics and Computer Science, Southampton, SO171BJ, United Kingdom.
Neil Lloyd
Affiliation:
University of Southampton, Dept. of Electronics and Computer Science, Southampton, SO171BJ, United Kingdom.
Sally Croucher
Affiliation:
University of Southampton, Dept. of Electronics and Computer Science, Southampton, SO171BJ, United Kingdom.
Yue Teng Tang
Affiliation:
University of Southampton, Dept. of Electronics and Computer Science, Southampton, SO171BJ, United Kingdom.
Bifeng Rong
Affiliation:
University of Southampton, Dept. of Electronics and Computer Science, Southampton, SO171BJ, United Kingdom.
Alan Evans
Affiliation:
University of Southampton, Dept. of Electronics and Computer Science, Southampton, SO171BJ, United Kingdom.
Tim Grasby
Affiliation:
University of Warwick, Dept. of Physics, Coventry, CV47AL, United Kingdom.
Terry Whall
Affiliation:
University of Warwick, Dept. of Physics, Coventry, CV47AL, United Kingdom.
Evan Parker
Affiliation:
University of Warwick, Dept. of Physics, Coventry, CV47AL, United Kingdom.
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Abstract

Silicon germanium pMOSFETs with channel lengths down to 0.4m have been fabricated on limited area silicon germanium virtual substrates. The devices have a 5nm thick Si0.3Ge0.7 active layer grown by MBE on top of relaxed Si0.7Ge0.3 virtual substrate. Virtual substrates were grown on top of 10μm square silicon pillars defined by etching trenches around their perimeter into the original silicon substrate. This limits the area of the growth zone, which in turn promotes the relaxation of the virtual substrate. Electrical measurements on 2μm long channel devices show that the maximum mobility in the strained SiGe devices is 211cm2V-1cm-1, compared to 104cm2V-1cm-1 for silicon reference devices. This increase in hole mobility increases the current drive of 0.4m devices measured at Vgt=-2V, Vds=-2.5V from 154μA/m to 192μA/μm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 745: Symposium N – Novel Materials and Processes for Advanced CMOS , 2002 , N4.6
Copyright
Copyright © Materials Research Society 2003

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References

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