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Si/Ge Intermixing and Island-Island Interaction in Ge/Si(100) Self-Assembled Islands

Published online by Cambridge University Press:  17 March 2011

G. Capellini ,
M. De Seta  and
F. Evangelisti
G. Capellini
Affiliation:
Istituto Nazionale per la Fisica della Materia e Dipartimento di Fisica Università di Roma Tre, via della Vasca Navale 84, I-00146 Roma, Italy
M. De Seta
Affiliation:
Istituto Nazionale per la Fisica della Materia e Dipartimento di Fisica Università di Roma Tre, via della Vasca Navale 84, I-00146 Roma, Italy
F. Evangelisti
Affiliation:
Istituto Nazionale per la Fisica della Materia e Dipartimento di Fisica Università di Roma Tre, via della Vasca Navale 84, I-00146 Roma, Italy Istituto di Elettronica dello Stato Solido, IESS-CNR, Via Cineto Romano 42, I-00156 Roma, Italy
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Abstract

In this paper we present a study of the influence of the growth rate and deposition temperature on the growth dynamic of self-assembled Ge/Si(100) islands. By combining AFM and XPS measurements we show that the main effect of rising the deposition temperature is an enhancement of the Ge-Si intermixing. The actual composition of the Ge islands as a function of deposition temperature has been measured in the 450 °C- 850 °C range: the Ge content x in the alloyed epilayer was found to decrease from x=1 to x=0.28. By changing the growth rate at fixed deposition temperature we were also able to modify the island density. The influence of the island density on the island size has been investigated. We found that an increase of the island density from 109 to 2×1010 cm−2 at T=600 °C brings about a change of the mean island size from 85 to 55 nm. This reduction is explained in terms of island-island interaction effects on the growth dynamic.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 638: Symposium F – Microcrystaline & Nanocrystalline Semiconductors-2000 , 2000 , F14.10.1
Copyright
Copyright © Materials Research Society 2001

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