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Si1−xGex Oxidation by Plasma Assisted Processing: Oxide Uniformity and Electrical Properties

Published online by Cambridge University Press:  10 February 2011

T. Busani ,
H. Plantier ,
R. A. B. Devine ,
C. Hernandez  and
Y. Campidelli
T. Busani
Affiliation:
France Telecom-CNET, BP 98, 38243 Meylan, France
H. Plantier
Affiliation:
LEMD, CNRS-UJF, UMR C5517, BP 166, 38042 Grenoble Cedex
R. A. B. Devine
Affiliation:
France Telecom-CNET, BP 98, 38243 Meylan, France
C. Hernandez
Affiliation:
France Telecom-CNET, BP 98, 38243 Meylan, France
Y. Campidelli
Affiliation:
France Telecom-CNET, BP 98, 38243 Meylan, France
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Abstract

Anodic oxides of SixGe1−x (0 ≤ x ≤ 1 ) alloys have been made by plasma assisted oxidation in a microwave frequency (2.45 GHz) reactor working in the constant current bias mode. Oxide films ∼15 – 40 nm (depending upon the Ge concentration) were obtained in 10 minutes without a temperature rise of the substrate of more than 100 °C. Detailed infrared absorption studies of the oxides enabled the Si-O-Si, Ge-O-Ge and Si-O-Ge vibrational modes to be identified, the strongest being at 1056, 858 and 1000 cm−1 respectively. These modes are associated with the O asymmetric stretch, their values are at lower wavenumbers than in bulk oxides due partly to ultraviolet radiation induced structural modification and partly to thin film optic effects. A statistical model for the different bonds present in SixGe1−xO2, when used to simulate the infrared spectrum does not predict the experimentally observed form, the Ge-O-Ge peak is in general too intense in the experimental spectrum. Auger electron spectroscopy profiling of the SixGe1−x oxides suggests that there is a build-up of Ge close to the surface/oxide interface so that when combined with the infrared data, we conclude that there is a GeO2 rich region at the surface/oxide interface. The oxide is, however, globally stoichiometric. Electrical measurements (C(V) and interface state density) were begun on metal-oxide-semiconductor (MOS) capacitors for Si1−xGex. oxides over the range of concentrations 0 ≤ x ≤ 1. Only Si1−xGex oxides with x≤0.15 appear to yield satisfactory MOS capacitor curves.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 573: Symposium Z – Compound Semiconductor Surface Passivation and Novel Device.. , 1999 , 157
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

[1] J. 1. Pankove, Optical processes in semiconductors, (1971)Google Scholar
[2] Nayak, D. K., Woo, J. C. S., Wang, K. L. and MacWilliam, K. P. Appl. Phys. Lett, 62, 2853, (1993)Google Scholar
[3] Geppert, W. and Schreiber, H.-U., Electron. Lett. 32, 2228 (1996)Google Scholar
[4] Kuznetsov, V. I., Veen, R. V., van der Drift, E., Werner, K., Verbruggen, A. H., and Radelaar, S. J. Vac. Sci. Technol. B 13, 2892 (1995)Google Scholar
[5] Pearsall, T. P., Temkim, H., Bean, J. C., and Luryi, S., IEEE Electron Dev. Lett. 7 330 (1986)Google Scholar
[6] Hosono, H., Mizuzuguchi, M., Kawazoe, H., and Nishii, J., Jpn. J. Appi. Phy. 35, L 236 (1996)Google Scholar
[7] Hellberg, P.-E, Zhang, S.-L., d'Heurle, F. M., and Petersson, C. S., J. Appl. Phys. 82, 5773 (1997)Google Scholar
[8] Liu, W. S., Chen, J. S., and Nicolet, M. A. J. Appl. Phys. 72, 4444, 1992 Google Scholar
[9] LeGoues, F. K., Rosemberg, R., Nguyen, T.N., Himpsel, F. and Meyerson, B. S., J. Appl. Phys. 65, 1724 (1989)Google Scholar
[10] Agarwal, A., Patterson, J. K., Greene, J. E. and Rockett, A. Appi. Phys. Lett. 63, 518 (1993)Google Scholar
[11] Goh, I. S., Hall, S., Eccleston, W., Zhang, J. F. and Warner, K., Electron. Lett. 30, 1988 (1998)Google Scholar
[12] Mukhopadhyay, M., Ray, S. K., Ghosh, T. B., Sreemany, M. and Maiti, C. K., Semicon. Sci. Techol. 11 360 (1996)Google Scholar
[13] Goh, I. S., Hall, S., Zhang, J. F., Hall, S., Eccleston, W. and Warner, K., Microelec. Eng. 28, 221 (1995)Google Scholar
[14] Seck, M., Devine, R.A.B., Hernandez, C., Campidelli, Y. and Dupuy, J-C, Appl. Phys. Lett. 72 2748 (1998)Google Scholar
[15] Busani, T., Plantier, H., Devine, R.A.B., Hernandez, C., Campidelli, Y., J. Non-Cryst. Solids (in press, 1999)Google Scholar
[16] Peeters, J. and Li, L., J. Appl. Phys. 72, 719 (1992)Google Scholar
[17] Martinet, C. and Devine, R.A.B. and Brunel, M., J. Appl. Phys. 81, 6996 (1997).Google Scholar
[18] Busani, T., Plantier, H.,, Devine, R.A.B., Hernandez, C., Campidelli, Y., J. Appl. Phys. (in press 1999)Google Scholar