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SI Contacts Formed from Spun-on Metallo-Organic Solutions

Published online by Cambridge University Press:  22 February 2011

C. S. Pai ,
B. Zhang ,
D. M. Scott ,
S. S. Lau ,
M. Bartur  and
W. F. Tseng
C. S. Pai
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California, San Diego, La Jolla, CA 92093
B. Zhang
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California, San Diego, La Jolla, CA 92093
D. M. Scott
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California, San Diego, La Jolla, CA 92093
S. S. Lau
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California, San Diego, La Jolla, CA 92093
M. Bartur
Affiliation:
California Institute of Technology, Pasadena, CA 91125 Also affiliated with SSDI, La Mirada, CA 90638
W. F. Tseng
Affiliation:
Naval Research Laboratory, Washington, D.C., 20375
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Abstract

The use of spun-on liquids to form ohmic and Schottky barrier contacts on Si has been investigated. Two commercially available metallo-organic solutions containing Au or Pt were applied to Si substrates by spinning techniques. The Au or Pt contacts were then formed by annealing at 250°C or 450°C respectively. The metallurgical interactions between the spun-on Au or Pt layers and the Si substrate were investigated by MeV backscattering spectrometry and X-ray diffraction as a function of the annealing temperature. The resulting electrical characteristics were investigated with four point probe, I-V and C-V techniques. It was found that the spun-on Au or Pt films react with Si substrates at much higher temperatures than those deposited by vacuum evaporation. The diode characteristics of the spun-on Au films are comparable to those of evaporated Au films ( φB ∼0.85V, n ∼1.08), whereas diode characteristics of spunon Pt films show no linear region on the ln I-V curve. The application of spun-on Au also improves the bondability of Si chips on Mo headers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983 , 639
Copyright
Copyright © Materials Research Society 1984

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References

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