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The Sensitivity of Renninger Scan Intensities with Al Content in Ga1-xA1xAs/GaAs Samples

Published online by Cambridge University Press:  03 September 2012

J.M. Sasaki ,
C. Campos  and
L. P. Cardoso
J.M. Sasaki
Affiliation:
INSTITUTO DE FÍSICA - UNICAMP, CP 6165 13 081 - CAMPINAS, SP, BRAZIL
C. Campos
Affiliation:
INSTITUTO DE FÍSICA - UNICAMP, CP 6165 13 081 - CAMPINAS, SP, BRAZIL
L. P. Cardoso
Affiliation:
INSTITUTO DE FÍSICA - UNICAMP, CP 6165 13 081 - CAMPINAS, SP, BRAZIL
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Abstract

The influence of the Al concentration in the X-Ray Renninger scans (RS) for the GaAlAs/GaAs system is investigated. The RS simulation program MULTX [Defect Control in Semiconductors, K. Sumino (ed.) Elsevier Sci. Pub. (North Holland), 1990, 1535] allows for the better choice of peak/background ratio which shows enough sensitivity to detect Al content changes. The three (000, 002, 111) and four beam (000, 002, 113, 111) peak/background ratios decrease with the increment of the Al content according to the structure factor calculation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 259
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

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